Application ID: 16367
This benchmark simulates the behavior of an ideal Schottky barrier diode made of a tungsten contact deposited on a silicon wafer. The resulting J-V (current density vs. applied voltage) curve obtained from the model under forward bias is compared with experimental measurements found in the literature
This model is included as an example in the following products:Semiconductor Module
however additional products may be needed to reproduce it. This example may be created and run using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Descrição dos Produtos and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.