Application ID: 14617
This one-dimensional model simulates three different heterojunction configurations under forward and reverse bias. The model shows the difference in using the continuous quasi-Fermi levels model as opposed to the thermionic emission model to determine the current transfer occurring between the different materials creating the junction under bias. The energy levels obtained with the model are then compared between each configuration in order to emphasize the origin of the current transfers, that is, whether it is primarily from holes in the valence band or from electrons in the conduction band. The J-V curves (current density vs. applied voltage) obtained from each simulation are compared with results obtained from the specialized literature.
This application was built using the following:Semiconductor Module
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