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Breakdown in a MOSFET

Application ID: 15583

MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation region. As the drain-source voltage is further increased the breakdown region is entered, where the current increases exponentially for a small increase in the applied voltage. This is due to impact ionization.

This model shows how to use the time dependent solver to model impact ionization in a MOSFET.

This model is included as an example in the following products:

Semiconductor Module

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