Multiphysics Simulations of Tunneling Current Modulation using Ultra-Thin Membranes Micromachined on SOI

B. Bercu, L. Montès, G. Bacles, J. Zimmermann, and P. Morfouli
Institute of Microelectronics, Electromagnetism and Photonics, Grenoble

In this paper, we study a novel type of NEMS - tunnel junctions mounted on thin membranes.

Mechanical stress applied to the junction induces changes in the height and length of the barrier, allowing the modulation of the tunnelling current.